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Journal of Applied Physics : Nanometric size effect on Ge diffusion in polycrystalline Si

By A. Portavoce, G. Chai, L. Chow, and J. Bernardini

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Book Id: WPLBN0002169471
Format Type: PDF eBook :
File Size: Serial Publication
Reproduction Date: 20 November 2008

Title: Journal of Applied Physics : Nanometric size effect on Ge diffusion in polycrystalline Si  
Author: A. Portavoce, G. Chai, L. Chow, and J. Bernardini
Volume: Issue : November 2008
Language: English
Subject: Science, Physics, Natural Science
Collections: Periodicals: Journal and Magazine Collection (Contemporary), Journal of Applied Physics Collection
Historic
Publication Date:
Publisher: American Institute of Physics

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G. Chai, L. Chow, And J. Bernardin, A. P. (n.d.). Journal of Applied Physics : Nanometric size effect on Ge diffusion in polycrystalline Si. Retrieved from http://gejl.info/


Description
Description: The nanosize effect on Ge diffusion (850 ≤ T ≤ 1000 °C) in polycrystalline Si layers is investigated. The Ge diffusion coefficients in microcrystalline and nanocrystalline Si layers made of 30 μm and 40 nm wide grains, respectively, are measured and compared. In the microcrystalline Si layer, the Ge diffusion coefficient in micrograin boundaries is measured using a conventional analytical solution of Fick’s equations corresponding to the Fisher model. In the nanocrystalline Si layer, the Ge diffusion coefficients in nanograins and in nanograin boundaries are measured via a method based on two-dimensional simulations using the Fisher model geometry. The diffusivities in nanograins and nanograin boundaries are one order of magnitude higher than in micrograins and micrograin boundaries, respectively. However, the nanosize effect appears to be different in grains and grain boundaries; despite that the activation energy for diffusion in 40 nm wide grains is at least 1 eV lower than in Si bulk. The activation energy in nanograin boundaries is about the same as in micrograin boundaries.

 
 



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