World Library  

Add to Book Shelf
Flag as Inappropriate
Email this Book

Journal of Applied Physics : N/I buffer layer for substrate microcrystalline thin film silicon solar cell

By T. Söderström, F.-J. Haug, V. Terrazzoni-Daudrix, X. Niquille, M. Python et al

Click here to view

Book Id: WPLBN0002169457
Format Type: PDF eBook :
File Size: Serial Publication
Reproduction Date: 20 November 2008

Title: Journal of Applied Physics : N/I buffer layer for substrate microcrystalline thin film silicon solar cell  
Author: T. Söderström, F.-J. Haug, V. Terrazzoni-Daudrix, X. Niquille, M. Python et al
Volume: Issue : November 2008
Language: English
Subject: Science, Physics, Natural Science
Collections: Periodicals: Journal and Magazine Collection, Journal of Applied Physics Collection
Historic
Publication Date:
Publisher: American Institute of Physics

Citation

APA MLA Chicago

F.-J. Haug, V. Terrazzoni-Daudrix, X. Niquille, M. Python Et A, T. S. (n.d.). Journal of Applied Physics : N/I buffer layer for substrate microcrystalline thin film silicon solar cell. Retrieved from http://gejl.info/


Description
Description: The influence of the substrate surface morphology on the performance of microcrystalline silicon solar cells in the substrate or n-i-p (nip) configuration is studied in this paper. The experiments are carried out on glass substrates coated with naturally textured films of ZnO deposited by low pressure chemical vapor deposition which serves as backcontact and as template for the light trapping texture. The film surface morphology can be modified with a plasma treatment which smoothens the V-shaped valleys to a more U-shaped form. We investigate, first, the influence of different substrates morphologies on the performance of microcrystalline (μc-Si:H) thin film silicon solar cells deposited by very high frequency plasma enhanced chemical vapor deposition. The V-shaped morphologies are found to have strong light trapping capabilities but to be detrimental for the μc-Si:H material growth and lead to degraded open circuit voltage (Voc) and fill factor (FF) of the solar cells. Hence, in Sec. 3B, we introduce a buffer layer with a higher amorphous fraction between the n doped and intrinsic layer. Our study reveals that the buffer layer limits the formation of voids and porous areas in the μc-Si:H material on substrates with strong light trapping capabilities. Indeed, this layer mitigates Voc and FF losses which enhances the performance of the μc-Si:H solar cell. Finally, by applying our findings, we report an efficiency of 9% for a nip μc-Si:H thin film silicon cell with a thickness of only 1.2 μm.

 
 



Copyright © World Library Foundation. All rights reserved. eBooks from World Journals, Database of Academic Research Journals are sponsored by the World Library Foundation,
a 501c(4) Member's Support Non-Profit Organization, and is NOT affiliated with any governmental agency or department.