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Journal of Applied Physics Collection


 
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Journal of Applied Physics : Composition dependence of electronic ...

By: G. He, L. D. Zhang, G. W. Meng, G. H. Li, G. T. Fei et al.

Description: Composition-dependent electronic structure and optical properties of Hf1−xSixOy (0.1 ≤ x ≤ 0.6) gate dielectrics on Si at 450 °C grown by UV-photo-induced chemical vapor deposition (UV-CVD) have been investigated via x-ray photoemission spectroscopy and spectroscopy ellipsometry (SE). By means of the chemical shifts in the Hf 4f, Si 2p, and O 1s spectra, the Hf–O–Si bondings in the as-deposited films have been confirmed. Analyses of composition-dependent ban...

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Journal of Applied Physics : Influence of substrate microstructure...

By: R. D. Levi, M. M. Samantaray, S. Trolier-McKinstry, and C. A. Randall

Description: The temperature dependence of the electrical leakage current density of chemical solution deposited BaTiO3 films on high purity Ni foils was investigated as function of the underlying Ni microstructure. Depending on the Ni heat treatment prior to BaTiO3 deposition, it was found that pores in the dielectric followed the profiles of the underlying Ni grain boundary grooves. The electrical properties were then characterized on capacitors with and without the pr...

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Journal of Applied Physics : Phase transition hysteresis and anoma...

By: Marta Prades, Héctor Beltrán, Nahum Masó, Eloisa Cordoncillo, and Anthony R. West

Description: The ferroelectric tetragonal tungsten bronze (TTB) phases, Ba2RETi2Nb3O15:RE = Nd,Sm, were prepared by low temperature solvothermal synthesis. The permittivity versus temperature data of sintered ceramics show two unusual features: first, a hysteresis of 50–100 °C between values of the Curie temperature Tc on heat-cool cycles and second: a huge depression in the Curie–Weiss temperature T0. Both effects are attributed to the complex nature of their TTB-relate...

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Journal of Applied Physics : Effect of small size on wave propagat...

By: A. Tounsi, H. Heireche, H. M. Berrabah, A. Benzair, and L. Boumia

Description: The effect of small size on wave propagation in double-walled carbon nanotubes (DWCNTs) under temperature field is investigated using the Euler–Bernoulli beam model. Dynamic governing equations of the carbon nanotube are formulated on the basis of nonlocal thermal elastic theory. The effects of temperature change and van der Waals forces between the inner and outer nanotubes are taken into account. Results show the significance of the small-scale effect on w...

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Journal of Applied Physics : Selective transmittance of linearly p...

By: Viktor Leontyev, Nicholas G. Wakefield, Kyrylo Tabunshchyk, Jeremy C. Sit, Michael J. Brett et al

Description: Columnar thin films exhibiting linear polarization selectivity have been theoretically investigated and fabricated using the glancing angle deposition (GLAD) technique. The film structure employed an s-shaped columnar morphology that may be either smoothly bent or composed of discrete segments. Finite-difference time-domain and frequency-domain methods have been used to model these thin film structures numerically. Simulation results have yielded optimal geo...

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Journal of Applied Physics : Thermal peculiarity of AlAs-capped In...

By: V. G. Dorogan, Yu. I. Mazur, J. H. Lee, Zh. M. Wang, M. E. Ware et al

Description: GaAs and AlAs thin capping layers as well as postgrowth rapid thermal annealing (RTA) were applied to InAs quantum dots (QDs) grown by molecular beam epitaxy to study the tunability of optical properties of QDs by photoluminescence (PL) methods. The PL of AlAs-capped QDs shows double-peak structure, as opposed to GaAs-capped QDs, which is due to the formation of two families of QDs in the AlAs-capped sample confirmed by the power dependent PL measurements. T...

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Journal of Applied Physics : Comparison of sensitivities of carbon...

By: Masuhiro Abe, Katsuyuki Murata, Tatsuaki Ataka, and Kazuhiko Matsumoto

Description: The sensitivities of biosensors using top-gate-type carbon nanotube field-effect transistors (CNT-FETs) with and without a top metal gate were compared. The CNT-FET biosensor without the top metal gate (sensor I) showed about three times higher transconductance than the one with the top metal gate (sensor II) when they were modulated by a reference gate electrode placed in a solution. Further, the sensitivity of sensor I was three times higher than sensor II...

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Journal of Applied Physics : Single dominant distribution of Ge na...

By: Seishi Abe, Masato Ohnuma, D. H. Ping, and Shigehiro Ohnuma

Description: This paper investigates size distribution of Ge nanogranules embedded in Al oxide thin film prepared by rf reactive sputtering method. It is found from the results of x-ray diffraction and small angle x-ray diffraction spectroscopy that their mean sizes distribute bimodally or single dominantly with respect to sputtering process parameter of additional oxygen ratio in Ar and Ge concentrations. Compositional plane of these distribution types reveals that sing...

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Journal of Applied Physics : Bending flexibility, kinking, and buc...

By: M. Riaz, A. Fulati, L. L. Yang, O. Nur, M. Willander et al

Description: Nanomechanical tests of bending flexibility, kinking, and buckling failure characterization of vertically aligned single crystal ZnO nanorods/nanowires were performed quantitatively by nanoindentation technique. These nanostructures were grown by the vapor liquid solid (VLS) method, a relatively high temperature approach, and the aqueous chemical growth (ACG) method, a relatively low temperature approach on different substrates, including SiC and Si. The fir...

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Journal of Applied Physics : Luminescence study of Eu3+ doped GdVO...

By: N. Shanta Singh, R. S. Ningthoujam, L. Romila Devi, N. Yaiphaba, V. Sudarsan et al

Description: Nanoparticles of GdVO4 doped with Eu3+ and core/shell of GdVO4:Eu3+/GdVO4 are prepared by urea hydrolysis method using ethylene glycol as capping agent as well as reaction medium at 130 °C. Unit cell volume increases when GdVO4 is doped with Eu3+ indicating the substitution of Gd3+ lattice sites by Eu3+. From luminescence study, it is confirmed that there is no particle size effect on emission positions of Eu3+. Optimum luminescence intensity is found to be ...

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Journal of Applied Physics : Growth of di-indenoperylene single cr...

By: Xue Na Zhang, Esther Barrena, Dimas Garcia de Oteyza, Emerson De Souza, and Helmut Dosch

Description: We report a combined atomic force microscopy/x-ray diffraction study of the growth and dewetting of the organic molecule di-indenoperylene (DIP) on SiO2 surfaces that have been functionalized with an amino-terminated self-assembled monolayer of 3-aminopropyltriethoxysilane [APS, (CH3CH2O)3Si(CH2)3NH2]. We disclose a transition of DIP thin films from two-dimensional to three-dimensional growth at 80 °C, which is associated with a change in the surface morphol...

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Journal of Applied Physics : An atomistic-based correction of the ...

By: S. Rodríguez-Bolívar, F. M. Gómez-Campos, and J. E. Carceller

Description: In this work, we propose a correction to the effective mass approach (EMA) to be used in Si quantum dot simulations. This correction tries to connect the different ways of modeling quantum dots within tight binding (considering the actual positions of the atoms and using additional atoms to passivate the surfaces) with those within the EMA, adapting the size of the simulated quantum dots to take the difference into account. With this aim, we implemented a 6×...

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Journal of Applied Physics : Fourier transform infrared spectrosco...

By: G. Scardera, T. Puzzer, G. Conibeer, and M. A. Green

Description: A correlation between bonding changes in silicon-rich silicon nitride films, subjected to high temperature annealing under N2 ambient, and the formation of silicon nanocrystals is presented. The postannealing appearance of a shoulder between 1000 and 1100 cm−1 in the Fourier transform infrared (FTIR) spectra of silicon-rich silicon nitride films is attributed to a reordering in the films toward an increased SiN4 bonding configuration resulting from the preci...

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Journal of Applied Physics : Structural characterization of GaAs a...

By: N. Begum, M. Piccin, F. Jabeen, G. Bais, S. Rubini et al

Description: We report Raman studies of GaAs and InAs nanowires (NWs) grown on SiO2 and GaAs surfaces by means of catalyst-assisted molecular beam epitaxy. We have investigated several tens of NWs grown using either Mn or Au as a catalyst. The LO and TO phonon lines of the NWs showed an energy downshift and a broadening as compared to the lines usually observed in the corresponding bulk materials. A doublet is sometimes observed in the LO region due to the observation of...

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Journal of Applied Physics : Thermal transport properties of nanoc...

By: Chien-Neng Liao, Yu-Chu Wang, and Hsu-Shen Chu

Description: Grain-size dependent thermal conductivity of sputtered nanocrystalline Bi–Sb–Te thin films was measured by a 3ω method. By changing deposition temperature from 100 °C to room temperature, the mean grain size of the Bi–Sb–Te films decreased from 83 to 26 nm and the lattice thermal conductivity reduced from 0.79 to 0.45 W/mK proportionally. The effect of grain boundary on lattice thermal conductivity can be described by an effective thermal boundary resistance...

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Journal of Applied Physics : Patterning polycrystalline thin films...

By: A. Toma, B. Šetina Batic, D. Chiappe, C. Boragno, U. Valbusa et al

Description: We report on self-organized patterning of polycrystalline noble metal films, supported on dielectric substrates, by defocused Ar+ ion beam irradiation. The initial surface morphology affects the formation of nanostructures, forcing the growth of ripples with a lateral periodicity imposed by the pristine polycrystalline grain distribution. At the early stages, the self-organization process is dominated by the shadowing of taller grains, while a crossover to t...

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Journal of Applied Physics : Tailoring nucleation and growth condi...

By: Chandan Srivastava, David E. Nikles, and Gregory B. Thompson

Description: To eliminate compositional and size variabilities between individual binary nanoparticles, it is essential to control the mechanistic steps involved in nanoparticle synthesis. A common method for synthesizing FePt nanoparticles involves the simultaneous decomposition and reduction in iron and platinum precursors, respectively. This simultaneous nucleation and growth method yields wide composition and size distributions. This paper describes and experimentall...

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Journal of Applied Physics : Electric-field-controlled electron re...

By: Y. Y. Liao, D. S. Chuu, and S. R. Jian

Description: This study investigates phonon-induced electron relaxation in a lateral double quantum dot that is embedded in a suspended slab. Exact calculations are made in electric fields. The dependence of the relaxation rate on the parameters of the dots and the slabs is analyzed. Numerical results indicate that the relaxation rate depends strongly on the phonon character of the slab. Unlike in the bulk environment, phonon-subband quantization clearly influences the b...

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Journal of Applied Physics : Optical properties of silicon nanocry...

By: Leonid Khriachtchev, Timur Nikitin, Claudio J. Oton, Rama Velagapudi, Jani Sainio et al

Description: The optical properties of silica layers containing silicon nanocrystals are analyzed in terms of spectral filtering in absorbing planar waveguides (cutoff spectra), m-line measurements, and x-ray photoelectron spectroscopy (XPS). The effects of optical dispersion, approximation of weak guiding, and depth dependence of refractive index in a planar waveguide are studied. We compare the measured optical properties of silicon-rich silicon oxide samples with the ...

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Journal of Applied Physics : Two-dimensional junction identificati...

By: C.-S. Jiang, H. R. Moutinho, R. Reedy, M. M. Al-Jassim, and A. Blosse

Description: We report on a two-dimensional investigation of the p-n junction in multicrystalline silicon solar cells using scanning Kelvin probe force microscopy (SKPFM). The junction location and depth were identified by SKPFM potential measurement and subsequent data analysis, where a procedure taking bias-voltage-induced changes in the potential and electric field was developed to avoid the effects of surface Fermi level pinning. Device simulation supported the junct...

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